tm january 2007 FDM3300NZ monolithic common drain n-channel 2.5v specified powertrench ? mosfet ?2006 fairchild semiconductor corporation FDM3300NZ rev.f www.fairchildsemi.com 1 FDM3300NZ monolithic common drain n-channe l 2.5v specified powertrench ? mosfet 20v, 10a, 23m features ? max r ds(on) = 23m at v gs = 4.5v, i d = 10a ? max r ds(on) = 28m at v gs = 2.5v, i d = 9a ? >2000v esd protection ? low profile - 1mm maximum - in the new package mlp 3.3x3.3 mm ? rohs compliant general description this dual n-channel mosfet has been designed using fairchild semiconductor' s advanced powertrench ? process to optimize the r ds(on) @ v gs = 2.5v on special mlp lead frame with all the drains on one side of the package. application ? li-lon battery pack mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating units v ds drain to source voltage 20 v v gs gate to source voltage 12 v i d drain current -continuous (note 1a) 10 a -pulsed 40 p d power dissipation (steady state) (note 1a) 2.1 w (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 60 c/w r ja thermal resistance, junction to ambient (note 1b) 135 device marking device package reel size tape width quantity 3300n FDM3300NZ power 33 7? 8mm 3000 units 5 4 6 3 7 2 8 1 d1 d2 d2 d1 d1 d2 d2 d1 s1 g1 s2 g2 d1 d2 d2 d1 d1 d2 d2 d1 s1 g1 s2 g2 power 33 d2 d2 d1 d1 g2 s2 g1 s1 5 6 7 8 4 3 2 1
FDM3300NZ monolithic common drain n-channel 2.5v specified powertrench ? mosfet FDM3300NZ rev.f www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 10.7 mv/ c i dss zero gate voltage drain current v ds = 16v, v gs = 0v 1 p a i gss gate to source leakage current v gs = 12v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 0.6 0.9 1.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -3 mv/ c r ds(on) static drain to source on resistance v gs = 4.5v, i d = 10a 16 23 m : v gs = 2.5v, i d = 9a 20 28 v gs = 4.5v, i d = 10a, t j = 125 c 22 31 g fs forward transconductance v ds = 5v, i d = 10a 35 s dynamic characteristics c iss input capacitance v ds = 10v, v gs = 0v, f = 1mhz 1210 1610 pf c oss output capacitance 330 440 pf c rss reverse transfer capacitance 180 270 pf r g gate resistance f = 1mhz 2.3 : switching characteristics t d(on) turn-on delay time v dd = 10v, i d = 1.0a v gs = 4.5v, r gen = 6.0 : 10 20 ns t r rise time 14 25 ns t d(off) turn-off delay time 26 42 ns t f fall time 13 23 ns q g total gate charge v gs = 4.5v v dd = 10v i d = 10a 12 17 nc q gs gate to source gate charge 2 nc q gd gate to drain ?miller? charge 4 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 2.0a (note 2) 0.7 1.2 v t rr reverse recovery time i f = 10a, di/dt = 100a/ p s 20 ns q rr reverse recovery charge 6 nc notes: 1: r t ja is determined with the device mounted on a 1 in 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ja is determined by the user's board design. (a) r t ja = 60c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5?x1.5?x0.062? thick pcb. (b) r t ja = 135c/w when mounted on a minimum pad of 2 oz copper. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 60c/w when mounted on a 1 in 2 pad of 2 oz copper b. 135c/w when mounted on a minimum pad of 2 oz copper
FDM3300NZ monolithic common drain n-channel 2.5v specified powertrench ? mosfet FDM3300NZ rev.f www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.00.51.01.52.0 0 5 10 15 20 25 30 35 40 v gs = 2.0v v gs = 3.0v v gs = 4.5v v gs = 2.5v v gs = 3.5v pulse duration = 300 p s duty cycle = 2.0%max v ds , drain to source voltage (v) i d , drain current (a) on region characteristics figure 2. 0 5 10 15 20 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = 3.5v pulse duration = 300 p s duty cycle = 2.0%max normalized drain to source on-resistance i d , drain current(a) v gs = 4.5v v gs =3.0v v gs = 2.5v v gs = 2.0v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 pulse duration = 300 p s duty cycle = 2.0%max i d = 10a v gs = 4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 12345 10 20 30 40 50 60 t j = 25 o c t j = 125 o c i d = 5.0a pulse duration = 300 p s duty cycle = 2.0%max v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 v dd = 5v pulse duration = 300 p s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 40 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDM3300NZ monolithic common drain n-channel 2.5v specified powertrench ? mosfet FDM3300NZ rev.f www.fairchildsemi.com 4 figure 7. 03691215 0 1 2 3 4 5 v dd = 10v v dd = 15v v dd = 5v v gs , gate to source voltage(v) q g , gate charge(nc) i d = 10a gate charge characteristics figure 8. 0.1 1 10 100 1000 60 3000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. forward bias safe 0.1 1 10 0.01 0.1 1 10 100 1s 100us 1ms 10ms 100ms 10s dc i d , drain current (a) v ds , drain to source voltage (v) r ds(on) limited single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c 60 o p e r a t i n g a r e a figure 10. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs =10v 500 0.5 single pulse r t ja = 135 o c/w p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - s i n g l e p u l s e m a x i m u m p o w e r d i s s i p a t i o n figure 11. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 single pulse r t ja = 135 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDM3300NZ monolithic common drain n-channel 2.5v specified powertrench ? mosfet FDM3300NZ rev.f www.fairchildsemi.com 5
FDM3300NZ rev. f www.fairchildsemi.com 6 FDM3300NZ monolithic common drain n-channel 2.5v specified powertrench ? mosfet rev. i22 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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